electrical spin driving by g -matrix modulation in spin-orbit qubits
| Description | |
| Date | 2018 |
| Date | |
| Auteurs | Crippa,- A | Maurand,- R | Bourdet,- L | Kotekar-patil,- D | Amisse,- A | Jehl,- X | Sanquer,- M | Laviéville,- R | Bohuslavskyi,- H | Hutin,- L | Barraud,- S | Vinet,- M | Niquet,- Y-m | De franceschi,- S | |
| Source | Physical Review Letters Volume 120 Issue 13 |
| Résumé | In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency, as well as the gate-voltage dependence and anisotropy of the hole g factor. We show that a g-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the g factor, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits. © 2018 American Physical Society. |
| DOI | http://dx.doi.org/10.1103/PhysRevLett.120.137702 |
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